Datasheet > PBYR645CT

PBYR645CT

更新时间： 2024-11-29 22:09:03

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
5页	37K
描述
Rectifier diodes Schottky barrier

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中文翻译

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PBYR645CT 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

Schottky barrier

PBYR645CT series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

V_R= 35 V/ 40 V/ 45 V

I_O(AV)= 10 A

V_F≤ 0.6V

GENERAL DESCRIPTION

PINNING

SOT82

Dual, common cathode schottky

DESCRIPTION

anode 1

cathode

rectifier diodes in

plastic

envelope. Intended for use as

output rectifiers in low voltage, high

frequency switched mode power

supplies.

anode 2

cathode

The PBYR645CT series is supplied

in the conventional leaded SOT82

package.

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

PBYR6

35CT 40CT 45CT

V_RRM

V_RWM

Peak repetitive reverse

voltage

Working peak reverse

voltage

Continuous reverse voltage

V_R

_mb≤ 100 ˚C

I_O(AV)

Average rectified output

current (both diodes

conducting)

square wave; δ = 0.5; T_mb≤ 119 ˚C

I_FRM

I_FSM

Repetitive peak forward

current per diode

square wave; δ = 0.5; T_mb≤ 119 ˚C

Non-repetitive peak forward t = 10 ms

current diode

t = 8.3 ms

sinusoidal; T_j= 125 ˚C prior to

surge; with reapplied V_RRM(max)

pulse width and repetition rate

limited by T_{j max}

I_RRM

T_j

Peak repetitive reverse

surge current per diode

Operating junction

temperature

150

˚C

T_stg

Storage temperature

- 65

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction per diode

K/W

to mounting base

both diodes

Thermal resistance junction in free air

to ambient

100

May 1998

Rev 1.200

12 3 4 5

中文翻译

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