5秒后页面跳转
PBYR735X PDF预览

PBYR735X

更新时间: 2024-11-30 22:09:03
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
5页 36K
描述
Rectifier diodes schottky barrier

PBYR735X 数据手册

 浏览型号PBYR735X的Datasheet PDF文件第2页浏览型号PBYR735X的Datasheet PDF文件第3页浏览型号PBYR735X的Datasheet PDF文件第4页浏览型号PBYR735X的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Rectifier diodes  
schottky barrier  
PBYR745X series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Low leakage, platinum barrier,  
schottky rectifier diodes in a full pack  
plastic envelope featuring low  
forward voltage drop, absence of  
stored charge. and guaranteed  
reverse surgecapability. The devices  
areintendedforuseinswitchedmode  
power supplies and high frequency  
circuits in general where low  
conductionand zero switchinglosses  
are important.  
SYMBOL  
PARAMETER  
MAX. MAX. MAX. UNIT  
PBYR7-  
35X  
35  
40X  
40  
45X  
45  
VRRM  
Repetitive peak reverse  
voltage  
V
VF  
IF(AV)  
Forward voltage  
0.57  
7.5  
0.57  
7.5  
0.57  
7.5  
V
A
Average forward current  
PINNING - SOD113  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
anode  
case  
k
1
a
2
2
case isolated  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS MIN.  
MAX.  
UNIT  
-35  
35  
35  
35  
-40  
40  
40  
40  
-45  
45  
45  
45  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
Ths 128 ˚C  
IF(AV)  
Average forward current  
square wave; δ = 0.5;  
-
7.5  
A
T
hs 123 ˚C  
IF(RMS)  
IFRM  
RMS output current  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
-
10.6  
15  
A
A
T
hs 123 ˚C  
IFSM  
Non-repetitive peak forward  
current  
t = 10 ms  
-
-
100  
110  
A
A
t = 8.3 ms  
sinusoidal Tj = 125 ˚C prior  
to surge; with reapplied  
VRRM(max)  
I2t  
I2t for fusing  
t = 10 ms  
-
-
-
50  
1
A2s  
A
IRRM  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
IRSM  
Non-repetitive peak reverse  
current  
Storage temperature  
Operating junction temperature  
tp = 100 µs  
1
A
Tstg  
Tj  
-65  
-
175  
150  
˚C  
˚C  
August 1996  
1
Rev 1.000  

与PBYR735X相关器件

型号 品牌 获取价格 描述 数据表
PBYR7-35X PHILIPS

获取价格

Rectifier Diode, Schottky, 1 Element, 7.5A, 35V V(RRM),
PBYR7-35X NXP

获取价格

7.5A, 35V, SILICON, RECTIFIER DIODE, PLASTIC, FULL PACK-2
PBYR740 NXP

获取价格

Rectifier diodes Schottky barrier
PBYR740 YAGEO

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 40V V(RRM), Silicon
PBYR7-40 NXP

获取价格

DIODE 7.5 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC, Rectifier Diode
PBYR740B NXP

获取价格

Rectifier diodes Schottky barrier
PBYR7-40B NXP

获取价格

7.5A, 40V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3
PBYR740B/T3 NXP

获取价格

7.5A, 40V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3
PBYR7-40BT/R PHILIPS

获取价格

Rectifier Diode, Schottky, 1 Element, 7.5A, 40V V(RRM),
PBYR740D NXP

获取价格

Rectifier diodes Schottky barrier