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PBYR740 PDF预览

PBYR740

更新时间: 2024-11-30 22:09:03
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
页数 文件大小 规格书
5页 38K
描述
Rectifier diodes Schottky barrier

PBYR740 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:R-PSFM-T2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.57 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:7.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:40 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

PBYR740 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR745 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VR = 40 V/ 45 V  
IF(AV) = 7.5 A  
VF 0.57 V  
k
1
a
2
GENERAL DESCRIPTION  
PINNING  
SOD59 (TO220AC)  
Schottky rectifier diodes in a plastic  
envelope. Intended for use as  
output rectifiers in low voltage, high  
frequency switched mode power  
supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
The PBYR745 series is supplied in  
the conventional leaded SOD59  
(TO220AC) package.  
tab  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR7  
40  
40  
40  
40  
45  
45  
45  
45  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
VR  
Tmb 114 ˚C  
-
-
V
A
IF(AV)  
Average rectified forward  
current  
square wave; δ = 0.5; Tmb 136 ˚C  
7.5  
15  
IFRM  
IFSM  
Repetitive peak forward  
current  
square wave; δ = 0.5; Tmb 136 ˚C  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
135  
150  
A
A
current  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current  
-
-
1
A
Operating junction  
temperature  
150  
175  
˚C  
˚C  
Tstg  
Storage temperature  
- 65  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction  
to mounting base  
Thermal resistance junction in free air  
to ambient  
-
-
-
3
-
K/W  
K/W  
60  
November 1998  
1
Rev 1.300  

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