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PBYR7025WT PDF预览

PBYR7025WT

更新时间: 2024-11-29 22:09:03
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管局域网
页数 文件大小 规格书
5页 54K
描述
Rectifier diodes Schottky barrier

PBYR7025WT 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.46 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:550 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:35 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:25 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

PBYR7025WT 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR7025WT series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
VR = 20 V / 25 V  
IO(AV) = 70 A  
a1  
1
a2  
3
k
2
VF 0.46 V  
GENERAL DESCRIPTION  
PINNING  
SOT429 (TO247)  
Dual, common cathode schottky  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k)  
rectifier diodes in  
a
plastic  
envelope. Intended for use as  
output rectifiers in low voltage, high  
frequency switched mode power  
supplies.  
1
2
3
anode 2 (a)  
cathode  
The PBYR7025WT series is  
supplied in the conventional leaded  
SOT429 (TO247) package.  
tab  
2
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
-20  
20  
20  
20  
-25  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
25  
25  
25  
V
V
V
Tmb 116 ˚C  
IO(AV)  
IFRM  
IFSM  
Average output current (both  
diodes conducting)  
square wave; δ = 0.5;  
-
70  
70  
A
Tmb 114 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
A
per diode  
Non-repetitive peak forward  
current, per diode  
Tmb 114 ˚C  
t = 10 ms  
-
-
500  
550  
A
A
t = 8.3 ms  
sinusoidal Tj = 125 ˚C prior  
to surge; with reapplied  
VRRM(max)  
IRRM  
IRSM  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
-
-
2
2
A
A
per diode  
Non-repetitive peak reverse  
current per diode  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
-65  
-
150  
150  
˚C  
˚C  
Operating junction temperature  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to per diode  
-
-
-
-
-
45  
0.9  
0.65  
-
K/W  
K/W  
K/W  
mounting base  
both diodes  
Thermal resistance junction to in free air  
ambient  
December 1998  
1
Rev 1.000  

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