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PBSS4041PT,215 PDF预览

PBSS4041PT,215

更新时间: 2024-11-30 21:03:47
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
15页 169K
描述
PBSS4041PT - 60 V, 2.7 A PNP low VCEsat (BISS) transistor TO-236 3-Pin

PBSS4041PT,215 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-236
针数:3Reach Compliance Code:compliant
风险等级:5.76Base Number Matches:1

PBSS4041PT,215 数据手册

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PBSS4041PT  
60 V, 2.7 A PNP low VCEsat (BISS) transistor  
Rev. 02 — 9 March 2010  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)  
small Surface-Mounted Device (SMD) plastic package.  
NPN complement: PBSS4041NT.  
1.2 Features and benefits  
„ Very low collector-emitter saturation voltage VCEsat  
„ High collector current capability IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High energy efficiency due to less heat generation  
„ AEC-Q101 qualified  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ Loadswitch  
„ Battery-driven devices  
„ Power management  
„ Charging circuits  
„ Power switches (e.g. motors, fans)  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
2.7  
8  
Unit  
V
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse;  
A
tp 1 ms  
[1]  
RCEsat  
collector-emitter  
IC = 3 A;  
-
80  
120  
mΩ  
saturation resistance  
IB = 300 mA  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 

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