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PBSS305PD,115 PDF预览

PBSS305PD,115

更新时间: 2024-11-24 21:04:03
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
15页 175K
描述
PBSS305PD - 100 V, 2 A PNP low V_CEsat (BISS) transistor TSOP 6-Pin

PBSS305PD,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TSOP包装说明:PLASTIC, SMD, SC-74, 6 PIN
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:7.44最大集电极电流 (IC):1 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):175JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):110 MHz最大关闭时间(toff):366 ns
最大开启时间(吨):210 nsBase Number Matches:1

PBSS305PD,115 数据手册

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PBSS305PD  
100 V, 2 A PNP low VCEsat (BISS) transistor  
Rev. 02 — 8 December 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)  
small Surface-Mounted Device (SMD) plastic package.  
NPN complement: PBSS305ND.  
1.2 Features  
„ Low collector-emitter saturation voltage VCEsat  
„ High collector current capability IC and ICM  
„ High collector current gain (hFE) at high IC  
„ High efficiency due to less heat generation  
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors  
1.3 Applications  
„ High-voltage DC-to-DC conversion  
„ High-voltage MOSFET gate driving  
„ High-voltage motor control  
„ High-voltage power switches (e.g. motors, fans)  
„ Thin Film Transistor (TFT) backlight inverter  
„ Automotive applications  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
100  
2  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
[1]  
[2]  
A
ICM  
peak collector current  
single pulse;  
tp 1 ms  
3  
A
RCEsat  
collector-emitter  
IC = 2 A;  
-
88  
125  
mΩ  
saturation resistance  
IB = 200 mA  
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
[2] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 
 

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