Datasheet > PBSS3515MB,315

PBSS3515MB,315

更新时间： 2024-11-27 15:47:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	535K
描述
PBSS3515MB - 15 V, 0.5 A PNP low VCEsat (BISS) transistor DFN 3-Pin

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数据手册

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PBSS3515MB,315 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DFN
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.56	Base Number Matches：	1

PBSS3515MB,315 数据手册

PBSS3515MB

SOT883B

15 V, 0.5 A PNP low VCEsat (BISS) transistor

Rev. 1 — 6 March 2012

Product data sheet

1. Product profile

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small

SOT883B Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS2515MB.

1.2 Features and benefits

 Leadless ultra small SMD plastic

 High efficiency due to less heat

package

generation

 Low package height of 0.37 mm

 AEC-Q101 qualified

 Low collector-emitter saturation

 Reduced Printed-Circuit Board (PCB)

voltage V_CEsat

requirements

 High collector current capability I_Cand

I_CM

1.3 Applications

 DC-to-DC conversion

 Supply line switching

 Battery charger

 LCD backlighting

 Driver in low supply voltage

applications (e.g. lamps and LEDs)

1.4 Quick reference data

Table 1.

Symbol

V_CEO

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter

voltage

open base

-15

I_C

collector current

-500

-1

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= -500 mA; I_B= -50 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

500

mΩ

12 3 4 5 6 7...12

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