Datasheet > PBSS306NX-Q

PBSS306NX-Q

更新时间： 2024-11-25 17:01:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	301K
描述
100 V, 4.5 A NPN low VCEsat transistorProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PBSS306NX-Q 数据手册

PBSS306NX-Q

100 V, 4.5 A NPN low VCEsat transistor

14 February 2024

Product data sheet

1. General description

NPN low V_CEsattransistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device

(SMD) plastic package.

PNP complement: PBSS306PX-Q

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-voltage DC-to-DC conversion

High-voltage MOSFET gate driving

High-voltage motor control

High-voltage power switches (e.g. motors, fans)

Automotive applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

100

I_C

collector current

4.5

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= 4 A; I_B= 200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

mΩ

12 3 4 5 6 7...14

中文翻译

下载PDF

与PBSS306NX-Q相关器件

型号	品牌	获取价格	描述	数据表
PBSS306NZ	NXP	获取价格	100 V, 5.1 A NPN low VCEsat (BISS) transistor
PBSS306NZ	NEXPERIA	获取价格	100 V, 5.1 A NPN low VCEsat (BISS) transistorProduction
PBSS306PX	NXP	获取价格	100 V, 3.7 A PNP low VCEsat (BISS) transistor
PBSS306PX	NEXPERIA	获取价格	100 V, 3.7 A PNP low V_CEsat (BISS) transistorProduction
PBSS306PX,115	NXP	获取价格	PBSS306PX - 100 V, 3.7 A PNP low V_CEsat (BISS) transistor SOT-89 3-Pin
PBSS306PX-Q	NEXPERIA	获取价格	100 V, 3.7 A PNP low VCEsat transistorProduction
PBSS306PZ	NXP	获取价格	100 V, 4.1 A PNP low VCEsat (BISS) transistor
PBSS306PZ	NEXPERIA	获取价格	100 V, 4.1 A PNP low VCEsat (BISS) transistorProduction
PBSS3515E	NXP	获取价格	15 V, 0.5 A PNP low VCEsat (BISS) transistor
PBSS3515E,115	NXP	获取价格	PBSS3515E - 15 V, 0.5 A PNP low VCEsat (BISS) transistor SC-75 3-Pin