Datasheet > P2N2222AZL1

P2N2222AZL1

更新时间： 2024-11-30 20:24:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	200K
描述
600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN

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中文翻译

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技术参数
数据手册
替代型号

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P2N2222AZL1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-92	包装说明：	CYLINDRICAL, O-PBCY-T3
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.05	Is Samacsys：	N
Base Number Matches：	1

P2N2222AZL1 数据手册

P2N2222A

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

http://onsemi.com

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

COLLECTOR

Characteristic

Collector−Emitter Voltage

Collector−Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

Vdc

BASE

Emitter−Base Voltage

6.0

Vdc

Collector Current − Continuous

600

mAdc

EMITTER

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

MARKING

DIAGRAM

Total Device Dissipation @ T = 25°C

1.5

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to

°C

stg

P2N2

222A

AYWW G

+150

TO−92

THERMAL CHARACTERISTICS

Characteristic

(T0−226AA)

CASE 29−11

STYLE 17

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

P2N2 = Device Code

222A

= Specific Device

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

P2N2222A

TO−92

5000 Units / Bulk

P2N2222AG

TO−92

(Pb−Free)

P2N2222ARL1

TO−92

2000 / Tape & Ammo

P2N2222ARL1G

TO−92

(Pb−Free)

P2N2222AZL1

TO−92

2000 / Tape & Reel

2000 Units / Tube

P2N2222AZL1G

TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

March, 2006 − Rev. 3

P2N2222A/D

12 3 4 5 6

中文翻译

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P2N2222AZL1 替代型号

型号	品牌	替代类型	描述	数据表
KSP2222ATA	ONSEMI	类似代替	NPN外延硅晶体管
P2N2222AG	ONSEMI	类似代替	Amplifier Transistors(NPN Silicon)
KSP2222ABU	FAIRCHILD	功能相似	NPN General Purpose Amplifier

与P2N2222AZL1相关器件

型号	品牌	获取价格	描述	数据表
P2N2369	CDIL	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
P2N2369A	ETC	获取价格	BJT
P2N2907	CDIL	获取价格	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
P2N2907A	CDIL	获取价格	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
P2N2907A	MOTOROLA	获取价格	Amplifier Transistor
P2N2907A	ONSEMI	获取价格	Amplifier Transistor(PNP Silicon)
P2N2907A/D	ETC	获取价格	Amplifier Transistor PNP
P2N2907ADIE	ONSEMI	获取价格	600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, DIE
P2N2907AG	ROCHESTER	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
P2N2907AG	ONSEMI	获取价格	晶体管硅塑料 PNP

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