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P2N2369A PDF预览

P2N2369A

更新时间: 2024-11-29 23:25:07
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
4页 225K
描述
BJT

P2N2369A 数据手册

 浏览型号P2N2369A的Datasheet PDF文件第2页浏览型号P2N2369A的Datasheet PDF文件第3页浏览型号P2N2369A的Datasheet PDF文件第4页 
IS/ISO 9002  
Lic# QSC/L-000019.3  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
P2N2369A  
NPN SILICON HIGH SPEED SWITHCHING TRANSISTOR  
TO - 92  
Plastic Package  
E
B
C
LOW POWER AND HIGH SPEED SWITCHING APPLICATIONS  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)  
VALUE  
UNIT  
DESCRIPTION  
SYMBOL  
VCEO  
VCBO  
VCES  
VEBO  
ICM  
15  
40  
40  
4.5  
500  
625  
V
V
V
V
mA  
mW  
Collector Emitter Voltage  
Collector Base Voltage  
Collector Emitter Voltage ( VBE=0)  
Emitter Base Voltage  
Collector Current Peak  
PD  
Power Dissipation @ Ta=25ºC  
Operating And Storage Junction  
Temperature Range  
Tj, Tstg  
-65 to +200  
ºC  
THERMAL RESISTANCE  
Rth(j-a)  
200  
ºC/W  
Junction to Ambient in free air  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
VALUE  
MIN  
15  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
UNIT  
MAX  
BVCEO (sus) * IC=10mA, IB=0  
V
V
V
V
Collector Emitter Breakdown Voltage  
Collector Emitter Breakdown Voltage  
Collector Base Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Cutoff Current  
Collector Cutoff Current  
Base Current  
Collector Emitter Saturation Voltage  
BVCES  
BVCBO  
BVEBO  
ICBO  
ICES  
40  
40  
IC=10mA, VBE=0  
IC=10mA, IE=0  
IE=10mA, IC=0  
VCB=20V, IE=0 Ta=150ºC  
VCE=20V, VBE=0  
VCE=20V, VBE=0  
IC=10mA, IB=1mA  
IC=30mA, IB=3mA  
IC=100mA, IB=10mA  
IC=10mA, IB=1mA  
Ta=125ºC  
4.5  
30  
0.4  
0.4  
0.20  
0.25  
0.5  
mA  
mA  
mA  
V
V
V
IB  
VCE(sat)  
*
0.3  
V
Continental Device India Limited  
Data Sheet  
Page 1 of 4  

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