Datasheet > P2N2907A/D

P2N2907A/D

更新时间： 2024-11-29 23:25:07

品牌	Logo	应用领域
其他 - ETC		晶体放大器晶体管
页数	文件大小	规格书
8页	119K
描述
Amplifier Transistor PNP

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P2N2907A/D 数据手册

ON Semiconductort

Amplifier Transistor

PNP Silicon

P2N2907A

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Value

–60

Unit

Vdc

CEO

CBO

EBO

–60

Vdc

–5.0

–600

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

CASE 29–11, STYLE 17

TO–92 (TO–226AA)

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

BASE

83.3

EMITTER

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

–60

–5.0

—

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = –10 mAdc, I = 0)

Collector–Base Breakdown Voltage

(I = –10 mAdc, I = 0)

Emitter–Base Breakdown Voltage

(I = –10 mAdc, I = 0)

—

Vdc

Collector Cutoff Current

(V = –30 Vdc, V

–50

nAdc

µAdc

CEX

= –0.5 Vdc)

EB(off)

Collector Cutoff Current

(V = –50 Vdc, I = 0)

CBO

—

–0.01

–10

(V = –50 Vdc, I = 0, T = 150°C)

Emitter Cutoff Current

(V = –3.0 Vdc)

—

–10

–50

nAdc

EBO

Collector Cutoff Current

(V = –10 V)

CEO

Base Cutoff Current

BEX

(V = –30 Vdc, V

= –0.5 Vdc)

EB(off)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 1

P2N2907A/D

12 3 4 5 6 7 8

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