5秒后页面跳转
P095PH10FGO PDF预览

P095PH10FGO

更新时间: 2024-11-08 13:23:11
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 260K
描述
Silicon Controlled Rectifier, 175A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element

P095PH10FGO 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:200 mAJESD-30 代码:O-MUPM-H3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大均方根通态电流:175 A断态重复峰值电压:1000 V
重复峰值反向电压:1000 V表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

P095PH10FGO 数据手册

 浏览型号P095PH10FGO的Datasheet PDF文件第2页 

与P095PH10FGO相关器件

型号 品牌 获取价格 描述 数据表
P095PH10FH IXYS

获取价格

Silicon Controlled Rectifier, 175 A, 1000 V, SCR
P095PH10FH0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1KV V(DRM),175A I(T),TO-209AC
P095PH10FHO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
P095PH12C2KO IXYS

获取价格

Silicon Controlled Rectifier, 175 A, 1200 V, SCR
P095PH12CG IXYS

获取价格

Silicon Controlled Rectifier, 175 A, 1200 V, SCR
P095PH12CGO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095PH12CHO IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
P095PH12CJ IXYS

获取价格

Silicon Controlled Rectifier, 175 A, 1200 V, SCR
P095PH12CJ0 IXYS

获取价格

Silicon Controlled Rectifier, 175000mA I(T), 1200V V(DRM)
P095PH12D2K IXYS

获取价格

Silicon Controlled Rectifier, 175A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element