Datasheet > OD-850F

OD-850F

更新时间： 2024-11-07 12:31:03

品牌	Logo	应用领域
OPTODIODE		/
页数	文件大小	规格书
2页	369K
描述
HIGH-POWER GaAlAs IR EMITTERS

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OD-850F 数据手册

HIGH-POWER GaAlAs IR EMITTERS

OD-850F

FEATURES

• High optical output

• 850nm peak emission

• Hermetically sealed TO-46 package

• Narrow angle for long distance applications

All surfaces are gold plated. Dimensions are nominal

values in inches unless otherwise specified. Caps are

welded to the case.

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Total Power Output, P

TEST CONDITIONS

I = 100mA

MIN

TYP

MAX

UNITS

Peak Emission Wavelength, λ

I = 20mA

850

Spectral Bandwidth at 50%, Δλ

Half Intensity Beam Angle, θ

I = 20mA

Deg

Volts

nsec

Forward Voltage, V

I = 100mA

1.6

Reverse Breakdown Voltage, V

Rise Time

= 10μA

= 50mA

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

Power Dissipation

200mW

100mA

300mA

Continuous Forward Current

Peak Forward Current (10μs, 200Hz)¹

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

¹Derate linearly above 25°C.

260°C

THERMAL PARAMETERS

Storage and Operating Temperature Range

-40°C to 100°C

Maximum Junction Temperature

100°C

Thermal Resistance, R

THJA

Thermal Resistance, R

THJA

400°C/W Typical

135°C/W Typical

¹Heat transfer minimized by measuring in still air with minimum heat conducting through leads.

²Air circulating at a rapid rate to keep case temperature at 25°C.

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013

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