Datasheet > OD-850F_18

OD-850F_18

更新时间： 2024-11-10 01:22:11

品牌	Logo	应用领域
OPTODIODE		/
页数	文件大小	规格书
4页	169K
描述
High-Power GaAlAs IR Emitters

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中文翻译

获取价格

数据手册

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OD-850F_18 数据手册

From Deep UV to Mid-IR

OD-850F

High-Power GaAlAs IR Emitters

An ITW Company

FEATURES

• High Optical Output

• 850 nm Peak Emission

• Hermetically Sealed TO-46 Package

• Narrow Angle for Long Distance Applications

Electro-Optical Characteristics at 25 °C

Parameters

Test Conditions

I_F= 100 mA

I_F= 20 mA

Min

Typ

850

Max

Units

Total Power Output, P_o

Peak Emission Wavelength, λ_P

Spectral Bandwidth at 50 %, Δλ

Half Intensity Beam Angle, θ

Forward Voltage, V_F

I_F= 20 mA

Deg

Volts

nsec

I_F= 100 mA

I_R= 10 µA

1.6

Reverse Breakdown Voltage, V_R

Rise Time

I_FP= 50 mA

Fall Time

Absolute Maximum Ratings at 25°

Parameters

Units

Power Dissipation

200 mW

100 mA

300 mA

5 Volts

260 °C

Continuous Forward Current

Peak Forward Current (10 µs, 200 Hz)¹

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10 sec)

¹Derate linearly above 25 °C.

Thermal Parameters

Parameters

Units

Storage and Operating Temperature Range

Maximum Junction Temperature

-40 °C to 100 °C

100 °C

Thermal Resistance, R_THJA

400 °C/W Typical

135 °C/W Typical

Thermal Resistance, R_THJA

¹Heat transfer minimized by measuring in still air with minimum heat conducting through leads.

²Air circulating at a rapid rate to keep case temperature at 25 °C.

Revision July 13, 2018

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