HIGH TEMPERATURE GaAlAs IR EMITTERS
OD-850FHT
FEATURES
• Extended operating temperature range
• No internal coatings
• No derating or heat sink required to 80°C
• Standard 2-lead TO-46 hermetic package
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
TEST CONDITIONS
I = 100mA
MIN
17
TYP
22
MAX
UNITS
mW
o
F
Peak Emission Wavelength, λ
I = 20mA
850
40
nm
P
F
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
I = 20mA
F
nm
I = 20mA
F
8
Deg
Volts
Volts
nsec
nsec
Forward Voltage, V
I = 100mA
F
1.6
30
F
2
Reverse Breakdown Voltage, V
Rise Time
I
= 10μA
= 20mA
= 20mA
5
R
R
I
I
20
FP
FP
Fall Time
20
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
200mW
100mA
300mA
5V
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-65°C to 150°C
Maximum Junction Temperature
150°C
1
Thermal Resistance, R
THJA
2
Thermal Resistance, R
THJA
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013