From Deep UV to Mid-IR
OD-850FHT
High-Temperature GaAlAs IR Emitters
An ITW Company
FEATURES
• High Optical Output
• 850 nm Peak Emission
• Hermetically Sealed TO-46 Package
• Narrow Angle for Long Distance Applications
• Extended Operating Temperature Range
• No Internal Coatings
• No Derating or Heat Sink Required to 80 °C
Electro-Optical Characteristics at 25 °C
Parameters
Test Conditions
IF = 100 mA
IF = 20 mA
Min
Typ
22
850
40
8
Max
Units
mW
nm
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50 %, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
17
IF = 20 mA
nm
IF = 20 mA
Deg
Volts
Volts
nsec
nsec
IF = 100 mA
IR = 10 µA
1.6
30
20
20
2
Reverse Breakdown Voltage, VR
Rise Time
5
IFP = 20 mA
IFP = 20 mA
Fall Time
Absolute Maximum Ratings at 25°
Parameters
Units
Power Dissipation1
200 mW
100 mA
300 mA
5 Volts
260 °C
Continuous Forward Current
Peak Forward Current (10 µs, 200 Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10 sec)
1 Derate per thermal derating curve above 25 °C.
2 Derate linearly above 25 °C
Thermal Parameters
Parameters
Units
Storage and Operating Temperature Range
Maximum Junction Temperature
-65 °C to 150 °C
150 °C
1
Thermal Resistance, RTHJA
400 °C/W Typical
135 °C/W Typical
2
Thermal Resistance, RTHJA
1 Heat transfer minimized by measuring in still air with minimum heat conducting through leads.
2 Air circulating at a rapid rate to keep case temperature at 25 °C.
Revision July 13, 2018
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