Datasheet > OD850LHT

OD850LHT

更新时间： 2024-09-17 12:48:23

品牌	Logo	应用领域
OPTODIODE		/
页数	文件大小	规格书
2页	286K
描述
HIGH TEMPERATURE GaAlAs IR EMITTERS

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OD850LHT 数据手册

HIGH TEMPERATURE GaAlAs IR EMITTERS

OD-850LHT

FEATURES

• Extended operating temperature range

• No internal coatings

• No derating or heat sink required to 80°C

• Standard 2-lead TO-46 hermetic package

All surfaces are gold plated. Dimensions are nominal

values in inches unless otherwise specified.

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Total Power Output, P

TEST CONDITIONS

I = 100mA

MIN

TYP

MAX

UNITS

Peak Emission Wavelength, λ

I = 20mA

850

Spectral Bandwidth at 50%, Δλ

Half Intensity Beam Angle, θ

I = 20mA

Deg

Volts

nsec

Forward Voltage, V

I = 100mA

1.6

Reverse Breakdown Voltage, V

Rise Time

= 10μA

= 20mA

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

Power Dissipation¹

200mW

100mA

300mA

Continuous Forward Current

Peak Forward Current (10μs, 200Hz)²

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

260°C

¹Derate per Thermal Derating Curve above 25°C

²Derate linearly above 25°C

THERMAL PARAMETERS

Storage and Operating Temperature Range

-65°C to 150°C

Maximum Junction Temperature

150°C

Thermal Resistance, R

THJA

Thermal Resistance, R

THJA

400°C/W Typical

135°C/W Typical

¹Heat transfer minimized by measuring in still air with minimum heat conducting through leads

²Air circulating at a rapid rate to keep case temperature at 25°C

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013

中文翻译

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