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NXPSC04650 PDF预览

NXPSC04650

更新时间: 2024-01-08 17:43:52
品牌 Logo 应用领域
瑞能 - WEEN 局域网功效二极管
页数 文件大小 规格书
8页 742K
描述
Silicon Carbide Diode

NXPSC04650 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:2.27
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NXPSC04650 数据手册

 浏览型号NXPSC04650的Datasheet PDF文件第2页浏览型号NXPSC04650的Datasheet PDF文件第3页浏览型号NXPSC04650的Datasheet PDF文件第4页浏览型号NXPSC04650的Datasheet PDF文件第5页浏览型号NXPSC04650的Datasheet PDF文件第6页浏览型号NXPSC04650的Datasheet PDF文件第7页 
NXPSC04650  
Silicon Carbide Diode  
8 October 2018  
Product data sheet  
1. General description  
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for  
high frequency switched-mode power supplies.  
2. Features and benefits  
Highly stable switching performance  
High forward surge capability IFSM  
Extremely fast reverse recovery time  
Superior in efficiency to Silicon Diode alternatives  
Reduced losses in associated MOSFET  
Reduced EMI  
Reduced cooling requirements  
RoHS compliant  
3. Applications  
Power factor correction  
Telecom/Server SMPS  
UPS  
PV inverter  
PC Silverbox  
LED/OLED TV  
Motor Drives  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRRM  
IF(AV)  
Tj  
repetitive peak reverse  
voltage  
-
-
650  
V
average forward  
current  
δ = 0.5; Tmb ≤ 136 °C; square-wave  
pulse; Fig. 1; Fig. 2  
-
-
-
-
4
A
junction temperature  
175  
°C  
Static characteristics  
VF forward voltage  
IF = 4 A; Tj = 25 °C; Fig. 4  
-
1.5  
1.7  
V

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