Datasheet > NXPSC06650D

NXPSC06650D

更新时间： 2022-02-26 14:16:57

品牌	Logo	应用领域
瑞能 - WEEN		/
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描述
Silicon Carbide Diode

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NXPSC06650D 数据手册

NXPSC06650D

Silicon Carbide Diode

4 January 2017

Product data sheet

1. General description

Silicon Carbide Schottky diode designed for high frequency switched mode power supplies in a

TO252 (DPAK) plastic package.

2. Features and benefits

•

Highly stable switching performance

•

High forward surge capability I_FSM

Extremely fast reverse recovery time

Superior in efficiency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

3. Applications

•

Power factor correction

Telecom/Server SMPS

UPS

PV inverter

PC Silverbox

LED/OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

650

I_F(AV)

average forward

current

δ = 0.5 ; T_mb≤ 125 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3; Fig. 4

T_j

junction temperature

175

°C

Static characteristics

V_F

forward voltage

I_F= 6 A; T_j= 25 °C; Fig. 6

I_F= 6 A; T_j= 150 °C; Fig. 6

1.5

1.8

1.7

2.1

Dynamic characteristics

Q_r

recovered charge

I_F= 6 A; dI_F/dt = 500 A/µs; V_R= 400 V;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...10

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