Datasheet > NXPSC04650X

NXPSC04650X

更新时间： 2022-02-26 14:16:56

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	282K
描述
Silicon Carbide Diode

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NXPSC04650X 数据手册

NXPSC04650X

Silicon Carbide Diode

24 August 2018

Product data sheet

1. General description

Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency

switched-mode power supplies.

2. Features and benefits

•

Highly stable switching performance

•

High forward surge capability I_FSM

Extremely fast reverse recovery time

Superior in efficiency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

Insulated package rated at 2500V RMS

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

650

I_F(AV)

average forward

current

δ = 0.5 ; T_h≤ 104 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3; Fig. 4

Static characteristics

V_Fforward voltage

I_F= 4 A; T_j= 25 °C; Fig. 6

I_F= 4 A; T_j= 150 °C; Fig. 6

1.5

1.8

1.7

2.1

12 3 4 5 6 7...11

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