Datasheet > NXPSC16650B

NXPSC16650B

更新时间： 2022-02-26 14:16:57

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	270K
描述
Silicon Carbide Diode

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NXPSC16650B 数据手册

NXPSC16650B

Silicon Carbide Diode

31 August 2018

Product data sheet

1. General description

Silicon Carbide Schottky diode in a TO263 (D2PAK) plastic package, designed for high frequency

switched-mode power supplies.

2. Features and benefits

•

Highly stable switching performance

•

High forward surge capability IFSM

Extremely fast reverse recovery time

Superior in efficiency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RRM

repetitive peak reverse

voltage

650

I_F(AV)

average forward

current

δ = 0.5 ; T_mb≤ 105 °C; square-wave

pulse; Fig. 1; Fig. 2; Fig. 3; Fig. 4

Static characteristics

V_Fforward voltage

I_F= 16 A; T_j= 25 °C; Fig. 6

I_F= 16 A; T_j= 150 °C; Fig. 6

1.5

1.8

1.7

2.1

12 3 4 5 6 7...10

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