Datasheet > NXPSC20650W-A

NXPSC20650W-A

更新时间： 2022-02-26 14:16:57

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描述
Silicon Carbide Diode

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NXPSC20650W-A 数据手册

NXPSC20650W-A

Silicon Carbide Diode

Rev.01 25 February 2019

Product data sheet

1. General description

Dual Silicon Carbide Schottky diode in a

3-lead TO-247 plastic package, designed

for high frequency switched-mode power

supplies. This product is qualiﬁed to

AEC-Q101 standard for use in automotive

applications.

alogen-Free

RoHS

AEC - Q101 Qualified

2. Features and beneﬁts

•

Highly stable switching performance

High forward surge capability I_FSM

Extremely fast reverse recovery time

Superior in eﬃciency to Silicon Diode alternatives

Reduced losses in associated MOSFET

Reduced EMI

Reduced cooling requirements

RoHS compliant

AEC-Q101 compliant

High junction operating temperature capability (T_j(max)= 175 °C)

3. Applications

•

Power factor correction

Telecom / Server SMPS

UPS

PV inverter

PC Silverbox

LED / OLED TV

Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_O(AV)

T_j

repetitive peak reverse

voltage

650

limiting average output

current

δ = 0.5 ; square-wave pulse; T_mb≤ 105 °C;

both diodes conducting; Fig. 1; Fig. 2

junction temperature

175

°C

Unit

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; per diode; Fig. 4

I_F= 10 A; T_j= 150 °C; per diode; Fig. 4

1.5

1.8

1.7

2.1

Dynamic characteristics

Q_rrecovered charge

I_F= 10 A; V_R= 400 V; dI_F/dt = 500 A/μs;

T_j= 25 °C; per diode; Fig. 6

12 3 4 5 6 7...10

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