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NVH4L018N075SC1

更新时间： 2024-11-20 11:12:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 352K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 13.5mohm, 750V, M2, TO247−4L

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NVH4L018N075SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 13.5 mohm,  
750ꢀV, M2, TO-247-4L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
750 V  
18 mꢀ @ 18 V  
140 A  
D
NVH4L018N075SC1  
Features  
G
• Typ. R  
= 13.5 mꢀ @ V = 18 V  
GS  
= 18 mꢀ @ V = 15 V  
GS  
DS(on)  
S1: Driver Source  
S2: Power Source  
Typ. R  
DS(on)  
S1  
S2  
• Ultra Low Gate Charge (Q  
= 262 nC)  
G(tot)  
N−CHANNEL MOSFET  
• High Speed Switching with Low Capacitance (C = 365 pF)  
oss  
• 100% Avalanche Tested  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
D
S2  
• Automotive On Board Charger  
• Automotive DC-DC Converter for EV/HEV  
• Automotive Traction Inverter  
S1  
G
TO247−4L  
CASE 340CJ  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
V
DSS  
750  
V
V
V
Gate−to−Source Voltage  
V
GS  
−8/+22  
−5/+18  
H4L018  
N075SC  
AYWWZZ  
Recommended Operation Values  
of Gate−to−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
C
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
I
D
140  
500  
99  
A
W
A
C
Power Dissipation  
(Note 1)  
P
D
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
C
= 100°C  
I
D
H4L018N075SC = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Power Dissipation  
(Notes 1)  
P
250  
483  
807  
W
A
D
WW = Work Week  
ZZ  
= Lot Traceability  
Pulsed Drain Current  
(Note 2)  
T
= 25°C  
I
DM  
C
Single Pulse Surge  
Drain Current Capability  
T = 25°C, t = 10 ꢁ s,  
I
A
A
p
DSC  
ORDERING INFORMATION  
R
= 4.7  
ꢀ
G
Device  
NVH4L018N075SC1  
Package  
Shipping  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
+175  
TO247−4L  
30 Units /  
Tube  
Source Current (Body Diode)  
I
S
108  
162  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 18 A, L = 1 mH) (Note 3)  
L(pk)  
Maximum Lead Temperature for Soldering  
(1/8″ from case for 5 s)  
T
L
300  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. EAS of 162 mJ is based on starting T = 25°C; L = 1 mH, I = 18 A,  
J
AS  
V
DD  
= 50 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
May, 2022 − Rev. 4  
NVH4L018N075SC1/D  
 
12345678

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