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NVH4L015N065SC1

更新时间： 2024-11-20 11:15:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 353K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−4L

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NVH4L015N065SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 12 mohm, 650 V,  
M2, TO-247-4L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
650 V  
18 mꢀ @ 18 V  
142 A  
D
NVH4L015N065SC1  
Features  
• Typ. R  
= 12 mꢀ @ V = 18 V  
GS  
= 15 mꢀ @ V = 15 V  
GS  
G
DS(on)  
S1: Driver Source  
S2: Power Source  
Typ. R  
DS(on)  
• Ultra Low Gate Charge (Q  
= 283 nC)  
S1  
S2  
G(tot)  
• High Speed Switching with Low Capacitance (C = 430 pF)  
N−CHANNEL MOSFET  
oss  
• 100% Avalanche Tested  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
D
S2  
• Automotive On Board Charger  
• Automotive DC-DC Converter for EV/HEV  
• Automotive Traction Inverter  
S1  
G
TO247−4L  
CASE 340CJ  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
V
DSS  
650  
V
V
V
Gate−to−Source Voltage  
V
GS  
−8/+22  
−5/+18  
Recommended Operation Values  
of Gate−to−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
C
H4L015  
N065SC  
AYWWZZ  
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
I
D
142  
500  
100  
250  
483  
798  
A
W
A
C
Power Dissipation  
(Note 1)  
P
D
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
C
= 100°C  
I
D
H4L015N065SC = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Power Dissipation  
(Note 1)  
P
D
W
A
Pulsed Drain Current  
(Note 2)  
T
= 25°C  
I
DM  
C
ZZ  
= Lot Traceability  
Single Pulse Surge  
Drain Current Capability  
T = 25°C, t = 10 ꢁ s,  
A
I
A
p
DSC  
ORDERING INFORMATION  
R
= 4.7  
ꢀ
G
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
Device  
NVH4L015N065SC1  
Package  
Shipping  
+175  
TO247−4L  
30 Units /  
Tube  
Source Current (Body Diode)  
I
S
114  
84  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 13 A, L = 1 mH) (Note 3)  
L(pk)  
Maximum Lead Temperature for Soldering  
(1/8″ from case for 5 s)  
T
L
300  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. EAS of 84 mJ is based on starting T = 25°C; L = 1 mH, I = 13 A,  
J
AS  
V
DD  
= 50 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
May, 2022 − Rev. 4  
NVH4L015N065SC1/D  
 
12345678

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