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NVD6824NLT4G

更新时间： 2024-09-17 01:13:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 79K
描述
Power MOSFET

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NVD6824NLT4G 数据手册

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NVD6824NL  
Power MOSFET  
100 V, 20 mW, 41 A, Single N−Channel  
Features  
• Low R  
to Minimize Conduction Losses  
• High Current Capability  
DS(on)  
• Avalanche Energy Specified  
• AEC−Q101 Qualified  
www.onsemi.com  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
I
D
(BR)DSS  
DS(on)  
20 mW @ 10 V  
23 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
100 V  
41 A  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
"20  
41  
Unit  
V
V
DSS  
N−Channel  
4
Gate−to−Source Voltage  
Continuous Drain Cur-  
V
V
GS  
D
T
= 25°C  
= 100°C  
= 25°C  
I
A
C
D
2
rent R  
(Note 1)  
1
q
JC  
T
C
29  
Steady  
State  
3
Power Dissipation R  
(Note 1)  
T
C
P
90  
W
A
q
D
JC  
DPAK  
CASE 369C  
STYLE 2  
G
T
C
= 100°C  
45  
Continuous Drain Cur-  
rent R (Notes 1 & 2)  
T = 25°C  
I
8.5  
6.0  
3.9  
1.9  
238  
60  
A
D
S
q
JA  
T = 100°C  
A
Steady  
State  
Power Dissipation R  
(Notes 1 & 2)  
T = 25°C  
A
P
W
q
D
JA  
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
T = 100°C  
A
4
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
A
p
Drain  
Current Limited by  
Package (Note 3)  
T = 25°C  
A
I
Dmaxpkg  
Operating Junction and Storage Temperature  
Source Current (Body Diode)  
T , T  
−55 to  
175  
°C  
J
stg  
I
S
41  
80  
A
2
Drain  
1
3
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Gate Source  
Energy (T = 25°C, V = 10 V,  
J
GS  
I
= 40 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
Y
= Year  
WW  
= Work Week  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
6824L = Device Code  
G
= Pb−Free Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
THERMAL RESISTANCE MAXIMUM RATINGS  
†
Device  
Package  
Shipping  
Parameter  
Symbol  
Value  
Unit  
NVD6824NLT4G  
DPAK  
(Pb−Free)  
2500/Tape  
& Reel  
Junction−to−Case − Steady State (Drain)  
R
1.7  
39  
°C/W  
q
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
JA  
NVD6824NLT4G−VF01  
DPAK  
(Pb−Free)  
2500/Tape  
& Reel  
1. The entire application environment impacts the thermal resistance values  
shown, they are not constants and are only valid for the particular conditions  
noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
October, 2016 − Rev. 2  
NVD6824NL/D  
 
123456

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