NUP2301MW6T1

更新时间： 2024-01-25 06:49:55

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
4页	90K
描述
Low Capacitance Diode Array for ESD Protection in Two Data Lines

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NUP2301MW6T1 数据手册

NUP2301MW6T1

Low Capacitance Diode

Array for ESD Protection in

Two Data Lines

NUP2301MW6T1 is a MicroIntegration device designed to

provide protection for sensitive components from possible harmful

electrical transients; for example, ESD (electrostatic discharge).

http://onsemi.com

Features

PIN CONFIGURATION

AND SCHEMATIC

• Low Capacitance (2.0 pf Maximum Between I/O Lines)

• Single Package Integration Design

• Provides ESD Protection for JEDEC Standards JESD22

N/C

I/O

Machine Model = Class C

I/O

Human Body Model = Class 3B

• Protection for IEC61000−4−2 (Level 4)

8.0 kV (Contact)

N/C

15 kV (Air)

• Ensures Data Line Speed and Integrity

• Fewer Components and Less Board Space

• Direct the Transient to Either Positive Side or to the Ground

• Pb−Free Package is Available

MARKING DIAGRAM

Applications

SC−88

CASE 419B

STYLE 23

• T1/E1 Secondary IC Protection

• T3/E3 Secondary IC Protection

• HDSL, IDSL Secondary IC Protection

• Video Line Protection

68 = Specific Device Code

= Date Code

• Microcontroller Input Protection

• Base Stations

• I C Bus Protection

ORDERING INFORMATION

†

Device

Package

Shipping

MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)

NUP2301MW6T1

NUP2301MW6T1G

SC−88

3000/Tape & Reel

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

mAdc

SC−88

(Pb−Free)

Forward Current

200

500

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

FM(surge)

RRM

Average Rectified Forward

Current (Note 1)

(Averaged over any 20 ms Period)

715

F(AV)

Repetitive Peak Forward Current

450

FRM

Non−Repetitive Peak Forward Current

FSM

t = 1.0 ms

t = 1.0 S

2.0

1.0

0.5

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.



Semiconductor Components Industries, LLC, 2005

Publication Order Number:

January, 2005 − Rev. 2

NUP2301MW6T1/D

12 3 4

中文翻译

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NUP2301MW6T1 替代型号

型号	品牌	替代类型	描述	数据表
NUP2301MW6T1G	ONSEMI	完全替代	Low Capacitance Diode Array for ESD Protection in Two Data Lines

与NUP2301MW6T1相关器件

型号	品牌	获取价格	描述	数据表
NUP2301MW6T1/D	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Two Data Lines
NUP2301MW6T1D	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Two Data Lines
NUP2301MW6T1G	ONSEMI	获取价格	Low Capacitance Diode Array for ESD Protection in Two Data Lines
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