Datasheet > NTHL022N120M3S

NTHL022N120M3S

更新时间： 2023-09-03 20:40:21

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	309K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L

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NTHL022N120M3S 数据手册

NTHL022N120M3S

TYPICAL CHARACTERISTICS

1800

1500

1200

900

tot

= 20 A

800

700

600

500

400

300

200

= 800 V

= 18/−3 V

= 4.5 ꢀ

= 800 V

= 18/−3 V

600

off

300

100

500

600

700

800

900

1000

(V)

R , GATE RESISTANCE (ꢀ)

Figure 7. Switching Loss vs. Drain Voltage

Figure 8. Switching Loss vs. Gate Resistance

800

700

300

100

= −3 V

tot

600

500

400

300

200

T = 25°C

= 20 A

= 800 V

= 4.5 ꢀ

= 18/−3 V

T = 175°C

T = −55°C

off

100

125

150

175

TEMPERATURE (°C)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 9. Switching Loss vs. Temperature

Figure 10. Diode Forward Voltage vs. Current

10000

1000

100

= 40 A

iss

= 800 V

= 400 V

oss

= 600 V

rss

f = 1 MHz

= 0 V

−3

120

150

0.1

100

800

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 11. Gate−to−Source Voltage vs. Total

Figure 12. Capacitance vs. Drain−to−Source

Charge

Voltage

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