Datasheet > NTHL099N60S5

NTHL099N60S5

更新时间： 2023-09-03 20:29:05

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	261K
描述
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 33 A, 99 mΩ, TO-247

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NTHL099N60S5 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾V,

Easy Drive, TO247-3L

600 V, 99 mW, 33 A

MAX

I MAX

DSS

DS(ON)

600 V

99 mW @ 10 V

33 A

NTHL099N60S5

Description

SUPERFET V MOSFET Easy Drive series combines excellent

switching performance without sacrificing ease of use and EMI issues

for both hard and soft switching topologies.

Features

• 650 V @ T = 150°C

• Typ. R

= 79.2 mW

• 100% Avalanche Tested

DS(on)

• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Telecom / Server Power Supplies

• EV Charger / UPS / Solar / Industrial Power Supplies

TO−247 Long Leads

CASE 340CX

ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

MARKING DIAGRAM

DSS

GSS

Gate−to−Source Voltage

AC (f > 1 Hz)

Continuous Drain Current

= 25°C

= 100°C

= 25°C

33*

20*

184

95*

T099N

60S5

AYWWZZ

Power Dissipation

Pulsed Drain Current (Note 1)

Pulsed Source Current

(Body Diode) (Note 1)

T099N60S5 = Specific Device Code

Operating Junction and Storage Temperature T , T

Range

−55 to

+150

°C

STG

YWW

= Assembly Location

= Data Code (Year & Week)

= Assembly Lot

Source Current (Body Diode)

33*

Single Pulse Avalanche

Energy

I = 5.1 A,

232

= 25 W

ORDERING INFORMATION

Avalanche Current

5.1

1.84

120

Device

NTHL099N60S5

Package

Shipping

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

TO−247

30 Units / Tube

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 seconds)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*Drain current limited by maximum junction temperature.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 13.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

August, 2021 − Rev. 2

NTHL099N60S5/D

12 3 4 5 6 7...9

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