Datasheet > NTHL099N60S5

NTHL099N60S5

更新时间： 2023-09-03 20:29:05

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	261K
描述
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 33 A, 99 mΩ, TO-247

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NTHL099N60S5 数据手册

NTHL099N60S5

TYPICAL CHARACTERISTICS

1.2

1.1

1.0

3.0

= 0 V

= 10 mA

= 10 V

= 13.5 A

2.5

2.0

1.5

1.0

0.9

0.8

0.5

−75 −50 −25

25 50 75 100 125 150 175

−75 −50 −25

25 50

75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage Variation vs.

Temperature

Figure 8. On−Resistance Variation vs.

Temperature

1000

100

10 ms

100 ms

1 ms

Operation in this Area is

Limited by R

DS(on)

10 ms

= 25°C

T = 150°C

Single Pulse

0.1

100

1000

100

125

150

, DRAIN−TO−SOURCE VOLTAGE (V)

T , CASE TEMPERATURE (°C)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case

Temperature

100

200

300

400

500

600

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. E_OSSvs. Drain−to−Source Voltage

www.onsemi.com

1 2 345 6 7...9

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