Datasheet > NTHL025N065SC1

NTHL025N065SC1

更新时间： 2023-09-03 20:35:54

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	298K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L

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NTHL025N065SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – EliteSiC,

19ꢀmohm,ꢀ650ꢀV, M2,

TO-247-3L

MAX

I MAX

(BR)DSS

DS(ON)

650 V

28.5 mꢀ @ 18 V

99 A

NTHL025N065SC1

Features

• Typ. R

= 19 mꢀ @ V = 18 V

= 25 mꢀ @ V = 15 V

DS(on)

Typ. R

DS(on)

• Ultra Low Gate Charge (Q

= 164 nC)

• Low Capacitance (C = 278 pF)

G(tot)

N−CHANNEL MOSFET

oss

• 100% Avalanche Tested

• T = 175°C

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• SMPS (Switching Mode Power Supplies)

• Solar Inverters

• UPS (Uninterruptable Power Supplies)

• Energy Storages

TO−247−3LD

CASE 340CX

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

650

Unit

DSS

Gate−to−Source Voltage

−8/+22

−5/+18

HL025N

065SC1

AYWWZZ

Recommended Operation Values

of Gate−to−Source Voltage

< 175°C

= 25°C

GSop

Continuous Drain

Current (Note 1)

Steady

State

348

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 1)

Steady

State

= 100°C

HL025N065SC1 = Specific Device Code

= Assembly Location

= Year

Power Dissipation

(Note 1)

174

323

WW = Work Week

Pulsed Drain Current

(Note 2)

= 25°C

= Lot Traceability

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

ORDERING INFORMATION

Source Current (Body Diode)

Device

NTHL025N065SC1

Package

Shipping

Single Pulse Drain−to−Source Avalanche

Energy (I

= 11.2 A, L = 1 mH) (Note 3)

TO−247−3LD 30 Units /

L(pk)

Tube

Maximum Lead Temperature for Soldering

(1/8″ from case for 5 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. E of 62 mJ is based on starting T = 25°C; L = 1 mH, I = 11.2 A,

= 50 V, V = 18 V.

Publication Order Number:

January, 2023 − Rev. 2

NTHL025N065SC1/D

12 3 4 5 6 7 8

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