Datasheet > NTHL041N60S5H

NTHL041N60S5H

更新时间： 2023-09-03 20:36:09

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	346K
描述
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 57 A, 41 mΩ, TO-247

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NTHL041N60S5H 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾V,

FAST, TO247-3L

MAX

I MAX

DSS

DS(ON)

600 V

41 mW @ 10 V

57 A

600 V, 41 mW, 57 A

NTHL041N60S5H

Description

The SUPERFET V MOSFET FAST series helps maximize system

efficiency by the extremely low switching losses in hard switching

application.

Features

• 650 V @ T = 150°C

• Typ. R

= 32.8 mW

• 100% Avalanche Tested

DS(on)

• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

• Telecom / Server Power Supplies

• EV Charger / UPS / Solar / Industrial Power Supplies

TO−247 Long Leads

CASE 340CX

ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

MARKING DIAGRAM

DSS

GSS

Gate−to−Source Voltage

AC (f > 1 Hz)

Continuous Drain Current

= 25°C

= 100°C

= 25°C

T041N

60S5H

AYWWZZ

Power Dissipation

329

200

Pulsed Drain Current (Note 1)

Pulsed Source Current

(Body Diode) (Note 1)

T041N60S5H = Specific Device Code

Operating Junction and Storage Temperature T , T

Range

−55 to

+150

°C

STG

YWW

= Assembly Location

= Data Code (Year & Week)

= Assembly Lot

Source Current (Body Diode)

Single Pulse Avalanche

Energy

I = 8 A,

560

= 25 W

ORDERING INFORMATION

Avalanche Current

Device

NTHL041N60S5H

Package

Shipping

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

3.29

120

TO−247

30 Units / Tube

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 seconds)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 28.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

August, 2021 − Rev. 2

NTHL041N60S5H/D

12 3 4 5 6 7...9

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