Datasheet > NTHL070N120M3S

NTHL070N120M3S

更新时间： 2023-09-03 20:33:33

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	222K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

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DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – EliteSiC,

65 mohm, 1200ꢀV, M3S,

TO-247-3L

NTHL070N120M3S

Features

MAX

I MAX

(BR)DSS

DS(ON)

1200 V

87 mW @ 18 V

34 A

N−CHANNEL MOSFET

• Typ. R

= 65 mW @ V = 18 V

DS(on)

• Ultra Low Gate Charge (Q

= 57 nC)

G(tot)

• High Speed Switching with Low Capacitance (C = 57 pF)

oss

• 100% Avalanche Tested

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• Solar Inverters

• Electric Vehicle Charging Stations

• UPS (Uninterruptible Power Supplies)

• Energy Storage Systems

TO−247−3L

CASE 340CX

• SMPS (Switch Mode Power Supplies)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

MARKING DIAGRAM

DSS

1200

−10/+22

−3/+18

Recommended Operation Values T <175°C

of Gate−to−Source Voltage

GSop

Continuous Drain

Steady

State

T =25°C

160

HL070N

120M3S

AYWWZZ

Current (Notes 1, 3)

Power Dissipation

(Note 1)

Continuous Drain

Current (Notes 1, 3)

Steady T =100°C

State

Power Dissipation

(Note 1)

HL070N120M3S = Specific Device Code

Pulsed Drain Current

(Note 2)

= 25°C

= Assembly Location

= Year

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

WW = Work Week

stg

+175

= Lot Traceability

Source Current (Body Diode)

= 25°C, V = −3 V

Single Pulse Drain−to−Source Avalanche

°C

ORDERING INFORMATION

Energy (Note 4)

Device

Package

Shipping

Maximum Lead Temperature for Soldering

(1/25″ from case for 10 s)

270

NTHL070N120M3S

TO−247−3L

30 Units /

Tube

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. The maximum current rating is based on typical R

performance.

DS(on)

4. EAS of 91 mJ is based on starting T = 25°C; L = 1 mH, I = 13.5 A,

= 100 V, V = 18 V.

Publication Order Number:

April, 2023 − Rev. 0

NTHL070N120M3S/D

12 3 4 5 6 7 8

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