5秒后页面跳转
NTHL070N120M3S PDF预览

NTHL070N120M3S

更新时间: 2024-10-29 11:13:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 222K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

NTHL070N120M3S 数据手册

 浏览型号NTHL070N120M3S的Datasheet PDF文件第2页浏览型号NTHL070N120M3S的Datasheet PDF文件第3页浏览型号NTHL070N120M3S的Datasheet PDF文件第4页浏览型号NTHL070N120M3S的Datasheet PDF文件第6页浏览型号NTHL070N120M3S的Datasheet PDF文件第7页浏览型号NTHL070N120M3S的Datasheet PDF文件第8页 
NTHL070N120M3S  
TYPICAL CHARACTERISTICS  
400  
300  
200  
200  
V
= 800 V  
= 7.5 A  
= 18/3 V  
= 25°C  
DD  
R
= 4.7 W  
= 15 A  
= 18/3 V  
= 25°C  
Etot  
Eon  
G
I
D
I
D
V
GS  
V
GS  
Etot  
Eon  
150  
100  
T
C
T
C
50  
0
100  
0
Eoff  
Eoff  
600  
650  
700  
750  
800  
0
2
4
6
8
10  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
R , GATE RESISTANCE (W)  
G
Figure 7. Switching Loss vs. DraintoSource  
Figure 8. Switching Loss vs. Gate Resistance  
Voltage  
250  
200  
150  
100  
200  
100  
V
GS  
= 3 V  
Etot  
R
= 4.7 W  
= 7.5 A  
= 800 V  
= 18/3 V  
G
Eon  
Eoff  
T = 175°C  
J
10  
1
I
D
V
DD  
V
GS  
T = 25°C  
J
50  
0
T = 55°C  
J
25  
50  
75  
100  
125  
150  
175  
0
2
4
6
8
10  
TEMPERATURE (°C)  
V
SD  
, BODY DIODE FORWARD VOLTAGE (V)  
Figure 9. Switching Loss vs. Temperature  
Figure 10. Reverse Drain Current vs. Body  
Diode Forward Voltage  
18  
10K  
1K  
V
DD  
= 400 V  
I
D
= 15 A  
15  
12  
C
ISS  
V
= 800 V  
DD  
9
6
3
C
C
OSS  
V
DD  
= 600 V  
100  
10  
1
RSS  
f = 1 MHz  
= 0 V  
0
V
GS  
3  
0
10  
20  
30  
40  
50  
60  
0.1  
1
10  
, DRAINTOSOURCE VOLTAGE (V)  
DS  
100  
800  
Q , GATE CHARGE (nC)  
G
V
Figure 11. GatetoSource Voltage vs. Total  
Figure 12. Capacitance vs. DraintoSource  
Charge  
Voltage  
www.onsemi.com  
5

与NTHL070N120M3S相关器件

型号 品牌 获取价格 描述 数据表
NTHL075N065SC1 ONSEMI

获取价格

Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L
NTHL080N120SC1 ONSEMI

获取价格

碳化硅 MOSFET,N 沟道,1200 V,80 mΩ,TO247−3L
NTHL080N120SC1A ONSEMI

获取价格

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
NTHL082N65S3F ONSEMI

获取价格

功率 MOSFET,N 沟道,SUPERFET® III,FRFET®,650 V,40
NTHL082N65S3HF ONSEMI

获取价格

MOSFET, Power, N-Channel, SUPERFET® III, FRFE
NTHL095N65S3H ONSEMI

获取价格

Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTHL095N65S3HF ONSEMI

获取价格

功率 MOSFET,N 沟道,SUPERFET® III,FRFET®,650 V,36
NTHL099N60S5 ONSEMI

获取价格

Power MOSFET, N-Channel, SUPERFET® V, Easy Dr
NTHL1000N170M1 ONSEMI

获取价格

Silicon Carbide (SiC) MOSFET – EliteSiC, 960
NTHL110N65S3F ONSEMI

获取价格

功率 MOSFET,N 沟道,SUPERFET® III,FRFET®,650 V,30