Datasheet > NTHL070N120M3S

NTHL070N120M3S

更新时间： 2023-09-03 20:33:33

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	222K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

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NTHL070N120M3S 数据手册

NTHL070N120M3S

TYPICAL CHARACTERISTICS

400

300

200

= 800 V

= 7.5 A

= 18/−3 V

= 25°C

= 4.7 W

= 15 A

= 18/−3 V

= 25°C

Etot

Eon

Etot

Eon

150

100

Eoff

600

650

700

750

800

, DRAIN−TO−SOURCE VOLTAGE (V)

R , GATE RESISTANCE (W)

Figure 7. Switching Loss vs. Drain−to−Source

Figure 8. Switching Loss vs. Gate Resistance

Voltage

250

200

150

100

200

100

= −3 V

Etot

= 4.7 W

= 7.5 A

= 800 V

= 18/−3 V

Eon

Eoff

T = 175°C

T = 25°C

T = −55°C

100

125

150

175

TEMPERATURE (°C)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 9. Switching Loss vs. Temperature

Figure 10. Reverse Drain Current vs. Body

Diode Forward Voltage

10K

= 400 V

= 15 A

ISS

= 800 V

OSS

= 600 V

100

RSS

f = 1 MHz

= 0 V

−3

0.1

, DRAIN−TO−SOURCE VOLTAGE (V)

100

800

Q , GATE CHARGE (nC)

Figure 11. Gate−to−Source Voltage vs. Total

Figure 12. Capacitance vs. Drain−to−Source

Charge

Voltage

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