Datasheet > NTHL030N120M3S

NTHL030N120M3S

更新时间： 2023-09-03 20:36:44

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	312K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L

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NTHL030N120M3S 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – EliteSiC,

29 mohm, 1200ꢀV, M3S,

TO-247-3L

MAX

I MAX

(BR)DSS

DS(ON)

1200 V

39 mW @ 18 V

73 A

N−CHANNEL MOSFET

NTHL030N120M3S

Features

 Typ. R

 Ultra Low Gate Charge (Q

= 29 mW @ V = 18 V

DS(on)

= 107 nC)

G(tot)

 High Speed Switching with Low Capacitance (C = 106 pF)

oss

 100% Avalanche Tested

 This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

 Solar Inverters

 Electric Vehicle Charging Stations

 UPS (Uninterruptible Power Supplies)

 Energy Storage Systems

TO−247−3LD

 SMPS (Switch Mode Power Supplies)

CASE 340CX

MAXIMUM RATINGS (T = 25C unless otherwise noted)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

1200

−10/+22

−3/+18

Recommended Operation Values T <175C

of Gate−to−Source Voltage

GSop

HL030N

120M3S

AYWWZZ

Continuous Drain

Current (Notes 1, 3)

Steady

State

T =25C

313

Power Dissipation

(Note 1)

Continuous Drain

Current (Notes 1, 3)

Steady T =100C

State

Power Dissipation

(Note 1)

156

193

HL030N120M3S = Specific Device Code

= Assembly Location

= Year

Pulsed Drain Current

(Note 2)

= 25C

WW = Work Week

= Lot Traceability

Operating Junction and Storage Temperature

Range

T , T

−55 to

C

stg

+175

Source Current (Body Diode)

ORDERING INFORMATION

= 25C, V = −3 V

Single Pulse Drain−to−Source Avalanche

220

270

C

Device

Package

Shipping

Energy (Note 4)

NTHL030N120M3S

TO−247−3L

30 Units /

Tube

Maximum Lead Temperature for Soldering

(1/25 from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. The maximum current rating is based on typical R

performance.

DS(on)

4. EAS of 220 mJ is based on starting T = 25C; L = 1 mH, I = 21 A,

= 100 V, V = 18 V.

 Semiconductor Components Industries, LLC, 2022

Publication Order Number:

April, 2023 − Rev. 0

NTHL030N120M3S/D

12 3 4 5 6 7 8

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