Datasheet > NTHL030N120M3S

NTHL030N120M3S

更新时间： 2023-09-03 20:36:44

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	312K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L

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NTHL030N120M3S 数据手册

NTHL030N120M3S

TYPICAL CHARACTERISTICS

200

160

120

2.0

12 V

= 20 V to 15 V

= 15 V to 20 V

1.5

12 V

1.0

0.5

I , DRAIN CURRENT (A)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

2.5

2.0

1.5

1.0

400

350

300

250

= 30 A

= 18 V

200

150

100

T = 150C

0.5

T = 25C

−75 −50 −25

25 50 75 100 125 150 175 200

T , JUNCTION TEMPERATURE (C)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance Variation with

Figure 4. On−Resistance vs. Gate−to−Source

Temperature

Voltage

1000

800

600

400

200

100

= 4.7 W

= 800 V

= 18/−3 V

= 25C

= 10 V

Etot

Eon

T = 175C

T = 25C

Eoff

T = −55C

I , DRAIN CURRENT (A)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Switching Loss vs. Drain Current

www.onsemi.com

1 2 345 6 7 8

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