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NTHL040N120SC1 PDF预览

NTHL040N120SC1

更新时间： 2024-01-12 03:04:25
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 308K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L

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NTHL040N120SC1 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,Reach Compliance Code：unknown
Factory Lead Time：43 weeks 1 day风险等级：5.76
Base Number Matches：1

NTHL040N120SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – EliteSiC,  
40ꢀmohm, 1200ꢀV, M1,  
TO-247-3L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
1200 V  
56 mꢀ @ 20 V  
60 A  
N−CHANNEL MOSFET  
D
NTHL040N120SC1  
Features  
• Typ. R  
= 40 mꢀ  
• Ultra Low Gate Charge (typ. Q  
DS(on)  
G
= 106 nC)  
G(tot)  
• Low Effective Output Capacitance (typ. C = 140 pF)  
oss  
• 100% UIL Tested  
S
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• UPS  
• DC−DC Converter  
• Boost Inverter  
G
D
S
TO−247−3LD  
CASE 340CX  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
MARKING DIAGRAM  
V
DSS  
1200  
−15/+25  
−5/+20  
V
V
V
Gate−to−Source Voltage  
V
GS  
Recommended Opera-  
tion Values of Gate−to−  
Source Voltage  
T
C
< 175°C  
V
GSop  
AYWWZZ  
NTHL040  
N120SC1  
Continuous Drain  
Current R  
Steady  
State  
T
C
= 25°C  
I
D
60  
A
ꢁ
JC  
Power Dissipation R  
P
348  
42  
W
A
ꢁ
D
JC  
JC  
Continuous Drain  
Current R  
Steady  
State  
T
= 100°C  
I
D
C
ꢁ
JC  
Power Dissipation R  
P
D
174  
240  
W
A
ꢁ
Pulsed Drain Current  
(Note 2)  
T = 25°C  
A
I
DM  
A
Y
= Assembly Location  
= Year  
WW  
ZZ  
= Work Week  
= Lot Traceability  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
+175  
NTHL040N120SC1 = Specific Device Code  
Source Current (Body Diode)  
I
S
34  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
613  
mJ  
ORDERING INFORMATION  
Energy (I  
= 23 A, L = 1 mH) (Note 3)  
L(pk)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
Package  
Shipping  
30 Units /  
Tube  
TO−247−3LD  
NTHL040N120SC1  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Junction−to−Case (Note 1)  
Junction−to−Ambient (Note 1)  
Symbol  
Value  
0.43  
40  
Unit  
°C/W  
°C/W  
R
ꢁ
JC  
R
ꢁ
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. E of 613 mJ is based on starting T = 25°C; L = 1 mH, I = 35 A,  
AS  
DD  
J
AS  
V
= 120 V, V = 20 V.  
GS  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
January, 2023 − Rev. 4  
NTHL040N120SC1/D  
 
1234567

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