Datasheet > NTHL030N120M3S

NTHL030N120M3S

更新时间： 2023-09-03 20:36:44

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	312K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L

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NTHL030N120M3S 数据手册

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−3LD

CASE 340CX

ISSUE A

DATE 06 JUL 2020

GENERIC

MARKING DIAGRAM*

XXXXX = Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

XXXXXXXXX

AYWWG

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON93302G

TO−247−3LD

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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