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NTHL030N120M3S PDF预览

NTHL030N120M3S

更新时间: 2023-09-03 20:36:44
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 312K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L

NTHL030N120M3S 数据手册

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MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO2473LD  
CASE 340CX  
ISSUE A  
DATE 06 JUL 2020  
GENERIC  
MARKING DIAGRAM*  
XXXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
XXXXXXXXX  
AYWWG  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON93302G  
TO2473LD  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  

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