Datasheet > NTHL022N120M3S

NTHL022N120M3S

更新时间： 2023-09-03 20:40:21

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	309K
描述
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L

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NTHL022N120M3S 数据手册

NTHL022N120M3S

TYPICAL CHARACTERISTICS

2.0

200

150

100

12 V

= 20 V to 15 V

1.5

12 V

1.0

0.5

= 20 V to 15 V

= 25°C

I , DRAIN CURRENT (A)

120

160

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

250

200

2.5

= 40 A

= 18 V

2.0

150

100

1.5

1.0

0.5

T = 150°C

T = 25°C

−55 −30 −5

95 120 145 170

T , JUNCTION TEMPERATURE (°C)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance Variation with

Figure 4. On−Resistance vs. Gate−to−Source

Temperature

Voltage

1600

1400

1200

1000

800

100

tot

= 10 V

= 4.5 ꢀ

= 800 V

= 18/−3 V

600

T = 25°C

400

T = 175°C

off

200

T = −55°C

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 5. Transfer Characteristics

Figure 6. Switching Loss vs. Drain Current

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1 2 345 6 7 8

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