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NTD95N02RT4G PDF预览

NTD95N02RT4G

更新时间： 2024-09-15 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 67K
描述
Power MOSFET 95 Amps, 24 Volts N−Channel DPAK

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中文翻译

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NTD95N02RT4G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：LEAD FREE, CASE 369AA-01, DPAK-3针数：4
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.18雪崩能效等级（Eas）：84 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：24 V最大漏极电流 (ID)：32 A
最大漏源导通电阻：0.005 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTD95N02RT4G 数据手册

 浏览型号NTD95N02RT4G的Datasheet PDF文件第2页浏览型号NTD95N02RT4G的Datasheet PDF文件第3页浏览型号NTD95N02RT4G的Datasheet PDF文件第4页浏览型号NTD95N02RT4G的Datasheet PDF文件第5页浏览型号NTD95N02RT4G的Datasheet PDF文件第6页 
NTD95N02R  
Power MOSFET  
95 Amps, 24 Volts  
N−Channel DPAK  
Features  
http://onsemi.com  
• High Power and Current Handling Capability  
• Fast Switching Performance  
V
R
TYP  
I MAX*  
D
(BR)DSS  
DS(ON)  
4.5 mW @ 10 V  
5.9 mW @ 4.5 V  
• Low R  
to Minimize Conduction Loss  
DS(on)  
24 V  
95 A  
• Low Gate Charge to Minimize Switching Losses  
• Pb−Free Packages are Available  
*I MAX in the product summary table is continuous  
and steady at 25°C.  
D
Applications  
D
• CPU Motherboard Vcore Applications  
• High Frequency DC−DC Converters  
• Motor Drives  
G
• Bridge Circuits  
S
MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
J
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
V
24  
20  
DSS  
Gate−to−Source Voltage  
V
V
GS  
4
Drain  
Thermal Resistance, Junction−to−Case  
R
P
1.45  
86  
°C/W  
q
JC  
Total Power Dissipation @ T = 25°C  
W
A
D
Drain Current –  
4
DPAK  
− Continuous @ T = 25°C, Limited by Package  
I
I
95  
32  
A
A
A
D
D
CASE 369AA  
(Surface Mount)  
STYLE 2  
− Continuous @ T = 25°C, Limited by Wires  
A
2
1
Thermal Resistance, Junction−to− Ambient  
(Note 1)  
R
52  
°C/W  
q
JA  
3
2
− Total Power Dissipation @ T = 25°C  
P
I
2.4  
15.8  
W
A
1
Gate  
3
A
D
D
Drain  
− Drain Current − Continuous @ T = 25°C  
A
Source  
Thermal Resistance, Junction−to−Ambient  
(Note 2)  
R
100  
°C/W  
q
JA  
4
− Total Power Dissipation @ T = 25°C  
P
I
1.25  
12  
W
A
A
D
D
Drain  
− Drain Current − Continuous @ T = 25°C  
A
4
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
DPAK  
CASE 369D  
(Straight Lead)  
STYLE 2  
T
STG  
Continuous Source Current (Body Diode)  
Single Pulse Drain−to−Source Avalanche  
I
45  
84  
A
S
1
E
mJ  
AS  
2
Energy – (V = 25 V, V = 10, I = 13 A,  
DD  
G
PK  
3
L = 1 mH, R = 25 W)  
G
1
2
3
Lead Temperature for Soldering Purposes  
(1/8 in from case for 10 seconds)  
T
260  
°C  
L
Gate Drain Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq  
[1 oz] including traces).  
Y
WW  
T95N02R  
G
= Year  
= Work Week  
= Device Code  
= Pb−Free Package  
2. Surface mounted on FR4 board using the minimum recommended pad size  
(Cu area = 0.412 in sq).  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 3  
NTD95N02R/D  
 
123456

中文翻译

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NTD95N02RT4G 替代型号

型号 品牌 替代类型 描述 数据表
NTD110N02RT4G ONSEMI

类似代替

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NTD4905NT4G ONSEMI

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