Datasheet > NSVDTC143ZM3T5G

NSVDTC143ZM3T5G

更新时间： 2024-11-30 01:17:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	110K
描述
Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

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NSVDTC143ZM3T5G 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	4 weeks	风险等级：	5.74
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

NSVDTC143ZM3T5G 数据手册

MUN2233, MMUN2233L,

MUN5233, DTC143ZE,

DTC143ZM3, NSBC143ZF3

Digital Transistors (BRT)

R1 = 4.7 kW, R2 = 47 kW

www.onsemi.com

NPN Transistors with Monolithic Bias

Resistor Network

PIN CONNECTIONS

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

SC−59

CASE 318D

STYLE 1

XX MG

SOT−23

CASE 318

STYLE 6

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

XXX MG

Compliant

MAXIMUM RATINGS (T = 25°C)

SC−70/SOT−323

CASE 419

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

XX MG

STYLE 3

CBO

CEO

Vdc

SC−75

CASE 463

STYLE 1

100

mAdc

Vdc

XX M

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

SOT−723

CASE 631AA

STYLE 1

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

= Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

January, 2015 − Rev. 5

DTC143Z/D

12 3 4 5 6 7...12

中文翻译

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与NSVDTC143ZM3T5G相关器件

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NSVDTC144WET1G	ONSEMI	获取价格	偏置电阻晶体管
NSVEMC2DXV5T1G	ONSEMI	获取价格	Complementary Bipolar Digital Transistor (BRT)
NSVEMD4DXV6T5G	ONSEMI	获取价格	Complementary Bipolar Digital Transistor (BRT)
NSVEMT1DXV6T1G	ONSEMI	获取价格	Dual General Purpose Transistor
NSVEMT1DXV6T5G	ONSEMI	获取价格	Dual General Purpose Transistor
NSVEMX1DXV6T1G	ONSEMI	获取价格	双 NPN 双极晶体管
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