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NSVDTC123JET1G PDF预览

NSVDTC123JET1G

更新时间： 2024-11-30 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管小信号双极晶体管数字晶体管
页数 文件大小 规格书
10页 130K
描述
NPN 双极数字晶体管 (BRT)

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中文翻译

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NSVDTC123JET1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3Reach Compliance Code：compliant
风险等级：5.75其他特性：BUILT IN BIAS RESISTANCE RATIO IS 21
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
参考标准：AEC-Q101表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSVDTC123JET1G 数据手册

 浏览型号NSVDTC123JET1G的Datasheet PDF文件第2页浏览型号NSVDTC123JET1G的Datasheet PDF文件第3页浏览型号NSVDTC123JET1G的Datasheet PDF文件第4页浏览型号NSVDTC123JET1G的Datasheet PDF文件第5页浏览型号NSVDTC123JET1G的Datasheet PDF文件第6页浏览型号NSVDTC123JET1G的Datasheet PDF文件第7页 
MUN5235, DTC123JE,  
DTC123JM3, NSBC123JF3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 47 kW  
NPN Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
PIN CONNECTIONS  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
MARKING DIAGRAMS  
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
SC−70/SOT−323  
XX MG  
CASE 419  
STYLE 3  
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SC−75  
CASE 463  
STYLE 1  
Compliant  
XX M  
XX M  
1
MAXIMUM RATINGS (T = 25°C)  
A
SOT−723  
CASE 631AA  
STYLE 1  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
V
CBO  
CEO  
1
V
50  
Vdc  
SOT−1123  
CASE 524AA  
STYLE 1  
I
C
100  
12  
mAdc  
Vdc  
X M  
1
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
5
Vdc  
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 − Rev. 0  
DTC123J/D  
1234567...10

中文翻译

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