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NSV40301MDR2G PDF预览

NSV40301MDR2G

更新时间： 2024-11-05 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
6页 107K
描述
低饱和压晶体管，双 NPN，40 V，6.0 A

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NSV40301MDR2G 数据手册

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NSS40301MDR2G  
Dual Matched 40 V, 6.0 A,  
Low VCE(sat) NPN Transistor  
2
These transistors are part of the ON Semiconductor e PowerEdge  
family of Low V  
transistors. They are assembled to create a pair  
CE(sat)  
of devices highly matched in all parameters, including ultra low  
saturation voltage V , high current gain and Base/Emitter turn on  
CE(sat)  
voltage.  
http://onsemi.com  
Typical applications are current mirrors, differential amplifiers,  
DC−DC converters and power management in portable and battery  
powered products such as cellular and cordless phones, PDAs,  
computers, printers, digital cameras and MP3 players. Other  
applications are low voltage motor controls in mass storage products  
such as disc drives and tape drives. In the automotive industry they can  
be used in air bag deployment and in the instrument cluster. The high  
40 VOLTS  
6.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 44 mW  
COLLECTOR  
7,8  
COLLECTOR  
5,6  
2
current gain allows e PowerEdge devices to be driven directly from  
PMU’s control outputs, and the Linear Gain (Beta) makes them ideal  
components in analog amplifiers.  
2
4
BASE  
BASE  
Features  
1
3
• Current Gain Matching to 10%  
• Base Emitter Voltage Matched to 2 mV  
• This is a Pb−Free Device  
EMITTER  
EMITTER  
8
MAXIMUM RATINGS (T = 25°C)  
A
1
Rating  
Symbol  
Max  
40  
Unit  
Vdc  
Vdc  
Vdc  
A
SOIC−8  
CASE 751  
STYLE 16  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
40  
6.0  
3.0  
6.0  
DEVICE MARKING  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
8
I
A
CM  
N40301  
ESD  
HBM Class 3B  
MM Class C  
AYWWG  
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
N40301 = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NSS40301MDR2G  
SOIC−8  
2500 /  
(Pb−Free) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
May, 2008 − Rev. 1  
NSS40301MD/D  
123456

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