5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号双极晶体管> NSV40200LT1G
NSV40200LT1G PDF预览

NSV40200LT1G

更新时间： 2024-11-05 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
5页 102K
描述
低饱和压晶体管，PNP，-40 V，2.0 A

阅读下载

中文翻译

获取价格

NSV40200LT1G 数据手册

 浏览型号NSV40200LT1G的Datasheet PDF文件第2页浏览型号NSV40200LT1G的Datasheet PDF文件第3页浏览型号NSV40200LT1G的Datasheet PDF文件第4页浏览型号NSV40200LT1G的Datasheet PDF文件第5页 
NSS40200LT1G  
40 V, 4.0 A, Low VCE(sat)  
PNP Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
http://onsemi.com  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
−40 VOLTS  
4.0 AMPS  
PNP LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 80 mW  
2
cluster. The high current gain allows e PowerEdge devices to be  
COLLECTOR  
3
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
• This is a Pb−Free Device  
1
BASE  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
−40  
Unit  
Vdc  
Vdc  
Vdc  
A
2
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
−40  
3
−7.0  
−2.0  
−4.0  
Collector Current − Continuous  
Collector Current − Peak  
I
C
1
2
I
A
CM  
SOT−23 (TO−236)  
CASE 318  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
STYLE 6  
Total Device Dissipation  
P
(Note 1)  
460  
mW  
D
T = 25°C  
Derate above 25°C  
A
DEVICE MARKING  
3.7  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
270  
θ
JA  
VA MG  
G
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
540  
mW  
D
1
T = 25°C  
A
Derate above 25°C  
4.3  
mW/°C  
°C/W  
VA = Specific Device Code  
Thermal Resistance,  
Junction−to−Ambient  
R
θ
230  
JA  
M
G
= Date Code*  
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
710  
mW  
Dsingle  
(Note 3)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
2
1. FR−4 @ 100 mm , 1 oz. copper traces.  
NSS40200LT1G  
SOT−23  
3000/Tape & Reel  
2
2. FR−4 @ 500 mm , 1 oz. copper traces.  
(Pb−Free)  
3. Thermal response.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
September, 2006 − Rev. 0  
NSS40200L/D  
 
12345

中文翻译

下载PDF

NSV40200LT1G 替代型号

型号 品牌 替代类型 描述 数据表
NSS40200LT1G ONSEMI

类似代替

 40 V, 4.0 A, Low VCE(sat) PNP Transistor

与NSV40200LT1G相关器件

型号 品牌 获取价格 描述 数据表
NSV40200UW6T1G ONSEMI

获取价格

 		低饱和压晶体管，PNP，-40 V，2.0 A
NSV40201LT1G ONSEMI

获取价格

 		低饱和压晶体管，NPN，40 V，2.0 A
NSV40300CTWG ONSEMI

获取价格

 		40 V, 3A, Low VCE(sat) PNP Transistor
NSV40300MDR2G ONSEMI

获取价格

 		低饱和压晶体管，双 PNP，40 V，6.0 A
NSV40300MZ4T1G ONSEMI

获取价格

 		3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor
NSV40301CTWG ONSEMI

获取价格

 		40 V, 3.0A Low VCE(sat) NPN Transistor
NSV40301MDR2G ONSEMI

获取价格

 		低饱和压晶体管，双 NPN，40 V，6.0 A
NSV40301MZ4T1G ONSEMI

获取价格

 		Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat)
NSV40301MZ4T3G ONSEMI

获取价格

 		3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor
NSV40302PDR2G ONSEMI

获取价格

 		低 VCE(sat) 晶体管，互补，40 V，6.0 A

与NSV40200LT1G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证