Datasheet > NSR01301MX4T5G

NSR01301MX4T5G

更新时间： 2024-11-26 11:14:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	164K
描述
100 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

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NSR01301MX4T5G 数据手册

Trench-based Schottky

Diode, 100 mA, 30 V

NSR01301MX4

These Trench Schottky diodes are optimized for low forward

voltage drop and low leakage current that offers the most optimal

power dissipation in applications. They are housed in space saving

micro−packaging ideal for space constrained applications.

www.onsemi.com

Features

• Smallest Package Available (01005); 0.445mm x 0.24mm

• 100 mA of Continuous Forward Current

CATHODE

ANODE

• Low Forward Voltage Drop − 450 mV (Typical) @ I = 100 mA

• Low Reverse Current − 0.04 mA (Typical) @ V = 30 V

MARKING

DIAGRAM

• Very Low Reverse Recovery Time − 8 ns Maximum

• Low Capacitance − 20 pF Typical

X4DFN2 (01005)

CASE 718AA

Typical Applications

• Mobile and Wearable Devices

• Camera Photo Flash

= Specific Device Code

M = Date Code

• Buck and Boost DC−DC Converters

• Reverse Current Protection

• Clamping & Protection

ORDERING INFORMATION

Device

Package

Shipping†

MAXIMUM RATINGS

NSR01301MX4T5G X4DFN2

10000 /

(Pb−Free)

Tape & Reel

Rating

Forward Current (DC)

Symbol

Value

100

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Reverse Voltage

Repetitive Peak Forward Current

(Pulse Wave = 1 sec, Duty Cycle = 66%)

1.0

FRM

ESD Rating:

Human Body Model

Machine Model

ESD

>8.0

>400

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

October, 2020 − Rev. 0

NSR01301/D

12 3 4 5

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