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NSR0140M2T5G PDF预览

NSR0140M2T5G

更新时间: 2024-02-02 05:11:44
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
3页 44K
描述
Schottky Barrier Diode

NSR0140M2T5G 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.92
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2JESD-609代码:e3
元件数量:1端子数量:2
最大输出电流:0.03 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.1 W
认证状态:Not Qualified表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NSR0140M2T5G 数据手册

 浏览型号NSR0140M2T5G的Datasheet PDF文件第2页浏览型号NSR0140M2T5G的Datasheet PDF文件第3页 
NSR0140M2T5G  
Schottky Barrier Diode  
These Schottky barrier diodes are designed for high−speed  
switching applications, circuit protection, and voltage clamping.  
Extremely low forward voltage reduces conduction loss. Miniature  
surface mount package is excellent for hand−held and portable  
applications where space is limited.  
http://onsemi.com  
Features  
Extremely Fast Switching Speed  
40 V SCHOTTKY  
BARRIER DIODE  
Extremely Low Forward Voltage − 0.28 V (Typ) @ I = 1.0 mAdc  
F
Low Reverse Current  
Lead−Free Plating  
Pb−Free Package is Available  
1
CATHODE  
2
ANODE  
MARKING  
DIAGRAM  
2
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
40  
Unit  
V
1
7E MG  
SOD−723  
CASE 509AA  
PLASTIC  
Peak Reverse Voltage  
V
G
RM  
1
2
Reverse Voltage  
V
30  
V
R
Forward Continuous Current (DC)  
Peak Forward Surge Current  
I
30  
mA  
mA  
F
7E = Specific Device Code  
I
500  
FSM  
M
= Month Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ESD Rating: Class 1C per Human Body Model  
Class A per Machine Model  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
THERMAL CHARACTERISTICS  
NSR0140M2T5G SOD−723  
2 mm Pitch  
8000/Tape & Reel  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board,  
P
100  
mW  
D
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(Note 1) T = 25°C  
Derate above 25°C  
A
1.0  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
1000  
Junction and Storage  
Temperature Range  
T , T  
−55 to +125  
°C  
J
stg  
1. FR−5 Minimum Pad.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 0  
NSR0140/D  
 

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