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NSR0115CQP6T5G

更新时间： 2024-11-26 11:15:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 187K
描述
100 mA, 15 V, Schottky Diode, Dual Common Cathode

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NSR0115CQP6T5G 数据手册

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NSR0115CQP6T5G  
Two Dual 15 V, 0.1 A  
Common Cathode Schottky  
Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Industry leading smallest  
surface mount package is excellent for hand−held and portable  
applications where space is limited.  
http://onsemi.com  
MARKING  
DIAGRAM  
Features  
• Extremely Fast Switching Speed  
SOT−963  
CASE 527AD  
XM M  
1
• Low Forward Voltage − 0.4 V (Max) @ I = 10 mA  
F
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
XM  
M
= Specific Device Code  
= Month Code  
Compliant  
Typical Applications  
• Portable Devices (Digital Cameras, MP3 Players … etc)  
• Mobile Phones  
PIN CONFIGURATION  
• Keyboards  
• Low Voltage Motor Control (Disc Drives)  
Pin 4  
Pin 3  
Pin 2  
Pin 1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Pin 5  
Pin 6  
Rating  
Reverse Voltage  
Symbol  
Value  
15  
Unit  
V
V
R
Forward Current (DC)  
I
100  
0.3  
mA  
A
F
Repetitive Peak Forward Current  
I
FRM  
Non−Repetitive Peak Forward  
Current (t < 1.0 s)  
I
2.0  
A
FSM  
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
Package  
Shipping  
NSR0115CQP6T5G SOT−963  
(Pb−Free)  
8000 / Tape &  
Reel  
THERMAL CHARACTERISTICS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Rating  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
260  
mW  
T
A
= 25°C  
(Note 1)  
Derate above 25°C  
2.1  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
480  
q
JA  
(Note 1)  
Total Device Dissipation  
P
360  
mW  
D
T
= 25°C  
(Note 2)  
A
Derate above 25°C  
2.9  
mW/°C  
°C/W  
Thermal Resistance, Junction to  
Ambient  
R
347  
q
JA  
(Note 2)  
Junction and Storage Temperature  
Range  
T , T  
−55 to  
+150  
°C  
J
stg  
2
1. FR−4 @ 10 mm , 1 oz. copper trace, still air.  
2
2. FR−4 @ 100 mm , 1 oz. copper trace, still air.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 0  
NSR0115CQP6/D  
 
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