是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | MP-3ZK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.3 |
雪崩能效等级(Eas): | 40 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 20 A | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.038 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 38 W |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP20P04SLG-E1-AYNote | RENESAS |
获取价格 |
SWITCHING P-CHANNEL POWER MOSFET | |
NP20P04SLG-E2-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 40V, 0.038ohm, 1-Element, P-Channel, Silicon, Met | |
NP20P04SLG-E2-AYNote | RENESAS |
获取价格 |
SWITCHING P-CHANNEL POWER MOSFET | |
NP20P06SLG | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP20P06SLG_15 | RENESAS |
获取价格 |
SWITCHING P-CHANNEL POWER MOSFET | |
NP20P06SLG-E1-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Met | |
NP20P06SLG-E1-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
NP20P06SLG-E1-AYNote | RENESAS |
获取价格 |
SWITCHING P-CHANNEL POWER MOSFET | |
NP20P06SLG-E2-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Met | |
NP20P06SLG-E2-AY | RENESAS |
获取价格 |
MOS FIELD EFFECT TRANSISTOR |