是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOT-353 | 包装说明: | TSSOP, TSSOP5/6,.08 |
针数: | 5 | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 4 weeks |
风险等级: | 1.39 | 系列: | AHC/VHC |
JESD-30 代码: | R-PDSO-G5 | JESD-609代码: | e3 |
长度: | 2 mm | 负载电容(CL): | 50 pF |
逻辑集成电路类型: | AND GATE | 最大I(ol): | 0.008 A |
湿度敏感等级: | 1 | 功能数量: | 1 |
输入次数: | 2 | 端子数量: | 5 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP5/6,.08 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 包装方法: | TR |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 2/5.5 V |
最大电源电流(ICC): | 0.04 mA | Prop。Delay @ Nom-Sup: | 11 ns |
传播延迟(tpd): | 16.5 ns | 认证状态: | Not Qualified |
施密特触发器: | NO | 筛选级别: | AEC-Q100 |
座面最大高度: | 1.1 mm | 子类别: | Gates |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 2 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 1.25 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NLVVHC1G08DFT2G | ONSEMI |
完全替代 |
Single 2-Input AND Gate |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NLVVHC1G08DFT2G | ONSEMI |
获取价格 |
Single 2-Input AND Gate | |
NLVVHC1G09DFT1G | ONSEMI |
获取价格 |
2-Input AND Gate with Open Drain Output | |
NLVVHC1G09DFT2G | ONSEMI |
获取价格 |
2-Input AND Gate with Open Drain Output | |
NLVVHC1G125DFT1G | ONSEMI |
获取价格 |
Single Non-Inverting Buffer, 3-State | |
NLVVHC1G126DFT1G | ONSEMI |
获取价格 |
Noninverting 3-State Buffer | |
NLVVHC1G126DFT2G | ONSEMI |
获取价格 |
Noninverting 3-State Buffer | |
NLVVHC1G132DFT1G | ONSEMI |
获取价格 |
2-Input NAND Schmitt-Trigger | |
NLVVHC1G132DFT2G | ONSEMI |
获取价格 |
2-Input NAND Schmitt-Trigger | |
NLVVHC1G132DTT1G | ONSEMI |
获取价格 |
单 2 输入 NAND 门极,带施密特触发器输入 | |
NLVVHC1G135DFT2G | ONSEMI |
获取价格 |
Single 2-Input NAND Gate, Schmitt Trigger ,Open Drain |