DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
• This product is suitable for medium output power (2 W) amplification
Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
•
•
Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
3-pin power minimold (34 PKG)
ORDERING INFORMATION
Part Number
NESG270034
Order Number
Package
Quantity
Supplying Form
NESG270034-AZ
3-pin power minimold
(34 PKG) (Pb-Free)Note
25 pcs
• Magazine case
(Non reel)
NESG270034-T1 NESG270034-T1-AZ
1 kpcs/reel • 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
<R>
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
25
9.2
V
2.8
V
750
mA
W
Note
Total Power Dissipation
Junction Temperature
Storage Temperature
Ptot
1.9
Tj
150
°C
°C
Tstg
−65 to +150
Note Mounted on 34.2 cm2 × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10577EJ02V0DS (2nd edition)
Date Published December 2007 NS
Printed in Japan
2005, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.