Datasheet > NESG240033

NESG240033

更新时间： 2024-01-04 02:16:25

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管
页数	文件大小	规格书
10页	225K
描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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NESG240033 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, MINIMOLD PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.72
最大集电极电流 (IC)：	0.4 A	基于收集器的最大容量：	1.1 pF
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	10500 MHz
Base Number Matches：	1

NESG240033 数据手册

NESG240033

THERMAL RESISTANCE (TA = +25°C)

Parameter

Symbol

Rth^j-a

Ratings

260

Unit

Termal Resistance from Junction to

Ambient^Note

°C/W

<R>

Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB

RECOMMENDED OPERATING RANGE (TA = +25°C)

Parameter

Collector Current

Symbol

MIN.

TYP.

MAX.

Unit

−

<R>

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

ICBO

IEBO

VCB = 5 V, IE = 0 mA

−

100

260

−

VEB = 0.4 V, IC = 0 mA

VCE = 5 V, IC = 15 mA

Note 1

hFE

140

180

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure (1)

VCE = 5 V, IC = 40 mA, f = 1 GHz

−

9.5

−

10.5

11.5

0.75

−

GHz

⏐S21e⏐²VCE = 5 V, IC = 40 mA, f = 1 GHz

NF1

NF2

Ga1

Ga2

VCE = 5 V, IC = 15 mA, f = 1 GHz,

Z^S= ZSopt, ZL = 50Ω

1.15

Noise Figure (2)

VCE = 5 V, IC = 40 mA, f = 1 GHz,

Z^S= ZSopt, ZL = ZLopt

−

9.0

−

0.8

−

Associated Gain (1)

Associated Gain (2)

VCE = 5 V, IC = 15 mA, f = 1 GHz,

Z^S= ZSopt, ZL = 50Ω

11.0

12.0

VCE = 5 V, IC = 40 mA, f = 1 GHz,

Z^S= ZSopt, ZL = ZLopt

Note 2

Reverse Transfer Capacitance

Maximum Stable Power Gain

Cre

VCB = 5 V, IE = 0 mA, f = 1 MHz

−

11.0

−

0.9

1.1

−

MSG^{Note 3}VCE = 5 V, IC = 40 mA, f = 1 GHz

13.0

23.5

Gain 1 dB Compression Output

Power

PO (1 dB)

VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,

Z^S= ZSopt, ZL = ZLopt

−

dBm

Output 3rd Order Intercept Point

OIP3

VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,

−

35.5

−

dBm

Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded.

S21

S¹²

3. MSG =

hFE CLASSIFICATION

Rank

R7A

Marking

hFE Value

140 to 260

Data Sheet PU10768EJ02V0DS

1 2 345 6 7...10

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与NESG240033相关器件

型号	品牌	描述	获取价格	数据表
NESG240033-A	NEC	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL	获取价格
NESG240033-A-FB	RENESAS	TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	获取价格
NESG240033-FB-A	NEC	RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
NESG240033-T1B	NEC	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL	获取价格
NESG240033-T1B	RENESAS	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL	获取价格
NESG240033-T1B-A	NEC	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL	获取价格

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